| PART |
Description |
Maker |
| UPA1918 UPA1918TE UPA1918TE-T2 UPA1918TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1913TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1815GR-9JG-E1 UPA1815GR-9JG-E2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| SP8J3 |
4V Drive Pch Pch MOS FET
|
Rohm
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| RSR025P03 |
4V Drive Pch MOS FET
|
ROHM[Rohm]
|
| RSS070P05 |
4V Drive Pch MOS FET
|
ROHM[Rohm]
|
| QS5U28 QS5U28-06 |
2.5V Drive Pch SBD MOS FET
|
Rohm
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
